transistor (pnp) features z low v ce(sat) : -0.2v(typ) i c /i b =-500ma/-50ma z compliments 2sd1664 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-3v,i c =-100ma 82 390 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.5 v transition frequency f t v ce =-5v,i c =-50ma,f=30mhz 150 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking bap baq bar sot-89 1. base 2. collector 3. emitter 1 2 3 2sb1 1 32 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2sb1 1 32 2 date:2011/05 www.htsemi.com semiconductor jinyu
2sb1 1 32 3 date:2011/05 www.htsemi.com semiconductor jinyu
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